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  1. Exams
  2. GATE EE
  3. Power Electronics
  4. Power Electronics
medium marks

Power Electronics

Comprehensive concepts of Power Electronics for GATE EE.

12 Topics
h prep
% subject weight
12 Topics
1

Static V-I characteristics and firing/gating circuits for Thyristor

In-depth analysis and problem solving for Static V-I characteristics and firing/gating circuits for Thyristor in GATE EE.

2m5/10
2

MOSFET

In-depth analysis and problem solving for MOSFET in GATE EE.

2m5/10
3

IGBT

In-depth analysis and problem solving for IGBT in GATE EE.

2m5/10
4

DC to DC conversion

In-depth analysis and problem solving for DC to DC conversion in GATE EE.

2m5/10
5

Buck- Boost and Buck-Boost Converters

In-depth analysis and problem solving for Buck- Boost and Buck-Boost Converters in GATE EE.

2m5/10
6

Single and three-phase configuration of uncontrolled rectifiers

In-depth analysis and problem solving for Single and three-phase configuration of uncontrolled rectifiers in GATE EE.

2m5/10
7

Voltage and Current commutated Thyristor based converters

In-depth analysis and problem solving for Voltage and Current commutated Thyristor based converters in GATE EE.

2m5/10
8

Bidirectional ac to dc voltage source converters

In-depth analysis and problem solving for Bidirectional ac to dc voltage source converters in GATE EE.

2m5/10
9

Magnitude and Phase of line current harmonics for uncontrolled and thyristor based converters

In-depth analysis and problem solving for Magnitude and Phase of line current harmonics for uncontrolled and thyristor based converters in GATE EE.

2m5/10
10

Power factor and Distortion Factor of ac to dc converters

In-depth analysis and problem solving for Power factor and Distortion Factor of ac to dc converters in GATE EE.

2m5/10
11

Single-phase and three-phase voltage and current source inverters

In-depth analysis and problem solving for Single-phase and three-phase voltage and current source inverters in GATE EE.

2m5/10
12

Sinusoidal pulse width modulation

In-depth analysis and problem solving for Sinusoidal pulse width modulation in GATE EE.

2m5/10